Ion implantation is a process that’s used to modify the properties of a solid, making changes to the physical, chemical or electrical properties possible, says the School of Electrical and Computer Engineering in Georgia Tech. Used to introduce impurities—also called dopants—into semiconductors—it’s well regarded as an alternative to deposition diffusion and has helped diffusion technology advance in a number of ways. Here are some of the advantages you can expect from using one:
One of the best things about the process is that it gives you greater control over the density of dopants that are in the wafer. This means you can maneuver those impurities with greater precision. For applications that involve IC fabrication, this is a good option to consider especially since it’s ideal for improving the quality of an IC. If you want better dose and depth profile, this one should go on top of your list.
Less sensitivity to cleaning procedures
Another great thing about ion implantation is that it’s much less sensitive to cleaning procedures, making it easier and less of a hassle on your part to clean. That also means you need less time and energy to spend on cleaning procedures.
Range of masking materials
There’s also a wide range of masking materials that can be chosen for the process. From photoresist and oxide to poly-Si, and metal, among other things.
The process also provides you with speedy results since a 6” wafer will only need about 6 seconds to moderate the dose. That’s a fast-acting solution and one that will come in handy for you in several applications.
While the process comes with many benefits, it also comes with a few drawbacks, cost being one. But if cost isn’t an issue, then this solution might provide you with the best long-term results.